| Silicon resonant sensors are fabricated from a single crystal silicon using proven 3-D semi-conductor micromachining techniques. Two "H" shaped resonators are patterned on the sensor, each operating at a high frequency output. As pressure is applied, the bridges are simultaneously stressed, one in compression and one in tension. The resulting change in resonant frequency produces a high differential output (kHz) directly proportional to the applied pressure. This simple time-based function is managed by a microprocessor. |
- Micro-machined from a single silicone crystal to provide superior stability and repeatability while eliminating hysteresis.
- Temperature effects are less than 1/10th of other silicon technologies (10 ppm/deg C), making this extremely stable in the most demanding process applications. The output produces a much higher signal to noise ratio as compared to analog sensors. Compared to piezoresistance silicon sensors, the silicon resonant sensor's immediate predecessor, the output is at least four times greater. Errors resulting from temperature and static pressure are insignificant in relation to total output.
- This advanced sensor technology is applied to Yokogawa's DPharp pressure transmitter and MT100/200 digital manometer.
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